IRG7PG35UPBF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature c.
* Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses
* Rugged tran.
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